Jun 08, 2011
Information of 2011 LED Lighting Taiwan Exhibition June 14th～16th,2011
『Etchant for Roughening AlGaAs, GaAs』 and 『Etchant for Roughening GaP』 were newly developed for High Brightness LED.
May 27, 2011
Information of 5th PHARMA JAPAN June 29th ～ July 1st, 2011
Apr 07, 2011
The impact by Tohoku Pacific Offshore Earthquake on Hayashi Pure Chemical
Jan 13, 2011
Etchant to make Roughness on Semiconductor Layer was newly developed for High Brightness LED, Yellowish Green ～ Red.
Jan 22, 2010
Link in English was newly generated.
Nov 10, 2008
High Performance Anisotropic Si Etchant was presented at the 18th Electrical Society Tokyo District Niigata Branch Office Research Symposium.
May 26, 2008
High Performance Anisotropic Si Etchant in wet process developed by joint of Hayashi Pure Chemical Ind., Ltd, and SANYO Semiconductor Manufacturing Co., Ltd. Applicable to MEMS processing
Jul 25, 2007
High Performance Aluminum Thin Film Etchant by wet process developed by joint of Hayashi Pure Chemical Ind., Ltd. and SANYO Semiconductor Manufacturing Co., Ltd.